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  r o h s telecom design guide ? ? 2006 littelfuse 3 - 83 www.littelfuse.com sidactor devices high surge current two-pin sidactor ? device this sidactor device is intended for very hostile environments such as catv (community antenna tv) systems and electronics c onnected to external antennas. * ?l? in part number indicates rohs compliance. for non-rohs compliant device, delete ?l? from part number. for surge ratings, see table below. general notes: ? all measurements are made at an ambient temperature of 25 c. i pp applies to -40 c through +85 c temperature range. ? i pp is a repetitive surge rating and is guaranteed for the life of the product. ? listed sidactor devices are bi-directional. all electr ical parameters and surge ratings apply to forward and reverse polarities. ? v drm is measured at i drm. ? v s is measured at 100 v/s. ? special voltage (v s and v drm ) and holding current (i h ) requirements are available upon request. * current waveform in s ** voltage waveform in s electrical parameters part number * v drm volts v s volts v t volts i drm amps i s mamps i t amps i h mamps p1400adl 120 160 3 5 800 2.2 50 P1800ADL 170 220 3 5 800 2.2 50 surge ratings in amps series i pp i tsm 50 / 60 hz di/dt 8x20 * 1.2x50 ** 10x1000 * 10x1000 ** amps amps amps amps/s d 1000 250 120 500 13
www.littelfuse.com 3 - 84 ? 2006 littelfuse ? telecom design guide high surge current two-pin sidactor? device note: off-state capacitance (c o ) is measured at 1 mhz with a 2 v bias. thermal considerations package symbol parameter value unit modified to-220 t j operating junction temperature range -40 to +150 c t s storage temperature range -65 to +150 c r ja thermal resistance: junction to ambient 60 c/w capacitance values part number pf min max p1400adl 140 200 P1800ADL 120 180 1 3 i h i t i s i drm v drm v t + v -v +i -i v s v-i characteristics 50 100 0 t r t d 0 peak value half value t ? time (s) i pp ? peak pulse current ? %i pp t r = rise time to peak value t d = decay time to half value waveform = t r x t d t r x t d pulse waveform -8 -40 -20 0 20 40 60 80 100 120 140 160 -6 -4 0 2 4 6 8 10 12 14 junction temperature (t j ) ? ?c percent of v s change ? % 25 ?c normalized v s change versus junction temperature 0.4 -40 -20 0 20 40 60 80 100 120 140 160 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 case temperature (t c ) ? ?c ratio of i h i h (t c = 25 ?c) 25 ?c normalized dc holding current versus case temperature


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